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FQN1N50CBU MOSFET Transistor

The FQN1N50CBU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQN1N50CBU transistor as follows.

Circuit diagram symbol of the FQN1N50CBU transistor

FQN1N50CBU Transistor Specification

Transistor Code FQN1N50CBU
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-92
Transistor SMD Code 1N50C
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 0.38A
Drain-Source On-State Resistance (Maximum) RDS(on) 6Ohm
Power Dissipation (Maximum) PD 0.89W
Drain-Source Capacitance 28pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 4.9nC

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