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FQD5N20LTM MOSFET Transistor

The FQD5N20LTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD5N20LTM transistor as follows.

Circuit diagram symbol of the FQD5N20LTM transistor

FQD5N20LTM Transistor Specification

Transistor Code FQD5N20LTM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 37W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 90nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 4.8nC

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