FQD3N60CTM_WS MOSFET Transistor

The FQD3N60CTM_WS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD3N60CTM_WS transistor as follows.

FQD3N60CTM_WS Transistor Specification

Transistor Code		FQD3N60CTM_WS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.4Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		10.5nC

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