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FQD2N90 MOSFET Transistor

The FQD2N90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD2N90 transistor as follows.

Circuit diagram symbol of the FQD2N90 transistor

FQD2N90 Transistor Specification

Transistor Code FQD2N90
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252_DPAK
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 7.2Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 12nC

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