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FQD3N40TM MOSFET Transistor

The FQD3N40TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD3N40TM transistor as follows.

Circuit diagram symbol of the FQD3N40TM transistor

FQD3N40TM Transistor Specification

Transistor Code FQD3N40TM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.4Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 35pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 6nC

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