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FQD12N20 MOSFET Transistor

The FQD12N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD12N20 transistor as follows.

Circuit diagram symbol of the FQD12N20 transistor

FQD12N20 Transistor Specification

Transistor Code FQD12N20
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252_DPAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.28Ohm
Power Dissipation (Maximum) PD 55W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 18nC

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