FDW258P MOSFET Transistor

The FDW258P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDW258P transistor as follows.

FDW258P Transistor Specification

Transistor Code		FDW258P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Transistor SMD Code		258P
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		1943pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		1.5V

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