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FDT434P MOSFET Transistor

The FDT434P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDT434P transistor as follows.

Circuit diagram symbol of the FDT434P transistor

FDT434P Transistor Specification

Transistor Code FDT434P
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT223
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 3W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 13nC

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