NFT1N60 MOSFET Transistor

The NFT1N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NFT1N60 transistor as follows.

NFT1N60 Transistor Specification

Transistor Code		NFT1N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Transistor SMD Code		1N60
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7.9Ohm
Power Dissipation (Maximum)	PD	3.3W
Drain-Source Capacitance		28pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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