FDMS8660S MOSFET Transistor

The FDMS8660S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS8660S transistor as follows.

FDMS8660S Transistor Specification

Transistor Code		FDMS8660S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0024Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		1215pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		113nC

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