FDMS86350ET80 MOSFET Transistor

The FDMS86350ET80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS86350ET80 transistor as follows.

FDMS86350ET80 Transistor Specification

Transistor Code		FDMS86350ET80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	198A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0024Ohm
Power Dissipation (Maximum)	PD	187W
Drain-Source Capacitance		1370pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		34nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		110nC

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