FDMS6681Z MOSFET Transistor

The FDMS6681Z is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS6681Z transistor as follows.

FDMS6681Z Transistor Specification

Transistor Code		FDMS6681Z
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWER56
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	49A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	73W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		172nC

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