FDME410NZT MOSFET Transistor

The FDME410NZT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDME410NZT transistor as follows.

FDME410NZT Transistor Specification

Transistor Code		FDME410NZT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MICROFET
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	1.4W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		9.2nC

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