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FDMB3900AN MOSFET Transistor

The FDMB3900AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMB3900AN transistor as follows.

Circuit diagram symbol of the FDMB3900AN transistor

FDMB3900AN Transistor Specification

Transistor Code FDMB3900AN
Transistor Type MOSFET
Control Channel Type N-Channel
Package MICROFET
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.023Ohm
Power Dissipation (Maximum) PD 1.6W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 11nC

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