free stats

Home » Electronics » FET » FDMC86340ET80 Transistor

FDMC86340ET80 MOSFET Transistor

The FDMC86340ET80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC86340ET80 transistor as follows.

Circuit diagram symbol of the FDMC86340ET80 transistor

FDMC86340ET80 Transistor Specification

Transistor Code FDMC86340ET80
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWER33
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 68A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0065Ohm
Power Dissipation (Maximum) PD 65W
Drain-Source Capacitance 468pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 7.9nS
Gate-Threshold Voltage (Maximum) 4V

FDMC86340ET80 MOSFET Transistor Overview

The FDMC86340ET80 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a POWER33 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the FDMC86340ET80 MOSFET

Followings are the key electrical characteristics of the FDMC86340ET80 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in FDMC86340ET80 MOSFET transistor is 80V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the FDMC86340ET80 MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the FDMC86340ET80 MOSFET transistor is 68A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of FDMC86340ET80 MOSFET transistor when the transistor is fully turned on is 0.0065 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the FDMC86340ET80 MOSFET transistor can comfortably transfer into heat without breaking is 65W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the FDMC86340ET80 MOSFET transistor is 468pF. This value influences to the switching speed of the FDMC86340ET80 MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the FDMC86340ET80 MOSFET transistor is switched on is 7.9nS. This is the rate at which FDMC86340ET80 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FDMC86340ET80 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of FDMC86340ET80 MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the FDMC86340ET80 MOSFET transistor. You can download the official FDMC86340ET80 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FDM6296 FDM6296 MOSFET Transistor FDMC6688P FDMC6688P MOSFET Transistor FDMC8010ET30 FDMC8010ET30 MOSFET Transistor FDMC86160ET100 FDMC86160ET100 MOSFET Transistor FDMC86260ET150 FDMC86260ET150 MOSFET Transistor FDMC86262P FDMC86262P MOSFET Transistor FDMC86570LET60 FDMC86570LET60 MOSFET Transistor FDMC8676 FDMC8676 MOSFET Transistor FDMC8678S FDMC8678S MOSFET Transistor FDM3622 FDM3622 MOSFET Transistor FDMC15N06 FDMC15N06 MOSFET Transistor FDMC2512SDC FDMC2512SDC MOSFET Transistor FDMC2514SDC FDMC2514SDC MOSFET Transistor FDMC2523P FDMC2523P MOSFET Transistor FDMC2610 FDMC2610 MOSFET Transistor FDMC2674 FDMC2674 MOSFET Transistor FDMC3020DC FDMC3020DC MOSFET Transistor FDMC3612 FDMC3612 MOSFET Transistor FDMC4435BZ FDMC4435BZ MOSFET Transistor FDMC510P FDMC510P MOSFET Transistor