FDMC86340ET80 MOSFET Transistor

The FDMC86340ET80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC86340ET80 transistor as follows.

FDMC86340ET80 Transistor Specification

Transistor Code		FDMC86340ET80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	68A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		468pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7.9nS
Gate-Threshold Voltage (Maximum)		4V

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