FDMC2610 MOSFET Transistor

The FDMC2610 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC2610 transistor as follows.

FDMC2610 Transistor Specification

Transistor Code		FDMC2610
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	42W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		12.3nC

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