CSD19532KTT MOSFET Transistor

The CSD19532KTT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD19532KTT transistor as follows.

CSD19532KTT Transistor Specification

Transistor Code		CSD19532KTT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	136A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0056Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		674pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3nS
Gate-Threshold Voltage (Maximum)		3.2V
Total Gate Charge		44nC

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