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IRF9610S MOSFET Transistor

The IRF9610S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9610S transistor as follows.

Circuit diagram symbol of the IRF9610S transistor

IRF9610S Transistor Specification

Transistor Code IRF9610S
Transistor Type MOSFET
Control Channel Type P-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 3Ohm
Power Dissipation (Maximum) PD 20W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 11nC

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