CS2N60FA9H MOSFET Transistor

The CS2N60FA9H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS2N60FA9H transistor as follows.

CS2N60FA9H Transistor Specification

Transistor Code		CS2N60FA9H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.5Ohm
Power Dissipation (Maximum)	PD	24W
Drain-Source Capacitance		31pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.5nC

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