MDF10N65BTH MOSFET Transistor

The MDF10N65BTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDF10N65BTH transistor as follows.

MDF10N65BTH Transistor Specification

Transistor Code		MDF10N65BTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	47.7W
Drain-Source Capacitance		128.3pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		48nS
Gate-Threshold Voltage (Maximum)		4V

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