CED40N10 MOSFET Transistor

The CED40N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED40N10 transistor as follows.

CED40N10 Transistor Specification

Transistor Code		CED40N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	37A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	93.8W
Drain-Source Capacitance		330pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		30nS
Total Gate Charge		49nC

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