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AP05N20GJ-HF MOSFET Transistor

The AP05N20GJ-HF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP05N20GJ-HF transistor as follows.

Circuit diagram symbol of the AP05N20GJ-HF transistor

AP05N20GJ-HF Transistor Specification

Transistor Code AP05N20GJ-HF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.6Ohm
Power Dissipation (Maximum) PD 44.6W
Drain-Source Capacitance 70pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8.5nS
Total Gate Charge 30nC

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