BUZ906X4S MOSFET Transistor

The BUZ906X4S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ906X4S transistor as follows.

BUZ906X4S Transistor Specification

Transistor Code		BUZ906X4S
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	14V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	500W
Operating Junction Temperature (Maximum)		150°C

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