BFC19 MOSFET Transistor

The BFC19 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BFC19 transistor as follows.

BFC19 Transistor Specification

Transistor Code		BFC19
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	400V
Drain Current (Maximum)	ID	86A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	690W
Drain-Source Capacitance		14000pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		507nC

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