BUZ100 MOSFET Transistor

The BUZ100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ100 transistor as follows.

BUZ100 Transistor Specification

Transistor Code		BUZ100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		800pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4V

UXPython is not the creator or an official representative of the BUZ100 MOSFET transistor. You can download the official BUZ100 MOSFET transistor datasheet to get more infromation about this transistor.

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