AM12N65P MOSFET Transistor

The AM12N65P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AM12N65P transistor as follows.

AM12N65P Transistor Specification

Transistor Code		AM12N65P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		165pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		23nC

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