BUK6C2R1-55C MOSFET Transistor

The BUK6C2R1-55C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK6C2R1-55C transistor as follows.

BUK6C2R1-55C Transistor Specification

Transistor Code		BUK6C2R1-55C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	228A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1075pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		206nS
Gate-Threshold Voltage (Maximum)		2.8V
Total Gate Charge		253nC

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