MTB75N05HDT4 MOSFET Transistor

The MTB75N05HDT4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB75N05HDT4 transistor as follows.

MTB75N05HDT4 Transistor Specification

Transistor Code		MTB75N05HDT4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		MTB75N05HD
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0095Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		1000pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		170nS
Gate-Threshold Voltage (Maximum)		4V

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