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APT8065BVR MOSFET Transistor

The APT8065BVR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT8065BVR transistor as follows.

Circuit diagram symbol of the APT8065BVR transistor

APT8065BVR Transistor Specification

Transistor Code APT8065BVR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.65Ohm
Power Dissipation (Maximum) PD 280W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Total Gate Charge 150nC

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