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FCH041N65F MOSFET Transistor

The FCH041N65F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCH041N65F transistor as follows.

Circuit diagram symbol of the FCH041N65F transistor

FCH041N65F Transistor Specification

Transistor Code FCH041N65F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 76A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.041Ohm
Power Dissipation (Maximum) PD 595W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 226nC

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