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APT10M09B2VFR MOSFET Transistor

The APT10M09B2VFR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT10M09B2VFR transistor as follows.

Circuit diagram symbol of the APT10M09B2VFR transistor

APT10M09B2VFR Transistor Specification

Transistor Code APT10M09B2VFR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TMAX
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 625W
Drain-Source Capacitance 3730pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 36nS

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