APT20M18B2VFR MOSFET Transistor

The APT20M18B2VFR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT20M18B2VFR transistor as follows.

APT20M18B2VFR Transistor Specification

Transistor Code		APT20M18B2VFR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TMAX
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	625W
Drain-Source Capacitance		2270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS

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