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APQ50SN06AH MOSFET Transistor

The APQ50SN06AH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ50SN06AH transistor as follows.

Circuit diagram symbol of the APQ50SN06AH transistor

APQ50SN06AH Transistor Specification

Transistor Code APQ50SN06AH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.022Ohm
Power Dissipation (Maximum) PD 120W
Drain-Source Capacitance 320.7pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35.2nS
Gate-Threshold Voltage (Maximum) 4V

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