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IRFB9N30APBF MOSFET Transistor

The IRFB9N30APBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB9N30APBF transistor as follows.

Circuit diagram symbol of the IRFB9N30APBF transistor

IRFB9N30APBF Transistor Specification

Transistor Code IRFB9N30APBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.45Ohm
Power Dissipation (Maximum) PD 96W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 33nC

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