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AP50T10GH MOSFET Transistor

The AP50T10GH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP50T10GH transistor as follows.

Circuit diagram symbol of the AP50T10GH transistor

AP50T10GH Transistor Specification

Transistor Code AP50T10GH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 37A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 89.2W
Drain-Source Capacitance 190pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 42nS
Gate-Threshold Voltage (Maximum) 3V

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