AP4800GM MOSFET Transistor

The AP4800GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4800GM transistor as follows.

AP4800GM Transistor Specification

Transistor Code		AP4800GM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		245pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.5nS

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