CEM6600 MOSFET Transistor

The CEM6600 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEM6600 transistor as follows.

CEM6600 Transistor Specification

Transistor Code		CEM6600
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.076Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		123pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.5nS

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