AP3P9R0I MOSFET Transistor

The AP3P9R0I is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3P9R0I transistor as follows.

AP3P9R0I Transistor Specification

Transistor Code		AP3P9R0I
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	31.3W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		3V

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