P0260ETF MOSFET Transistor

The P0260ETF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P0260ETF transistor as follows.

P0260ETF Transistor Specification

Transistor Code		P0260ETF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.3Ohm
Power Dissipation (Maximum)	PD	29W
Drain-Source Capacitance		41pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		61nS

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