AP2906EY MOSFET Transistor

The AP2906EY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2906EY transistor as follows.

AP2906EY Transistor Specification

Transistor Code		AP2906EY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT26
Transistor SMD Code		Z02SS
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V

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