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AP2906EY MOSFET Transistor

The AP2906EY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2906EY transistor as follows.

Circuit diagram symbol of the AP2906EY transistor

AP2906EY Transistor Specification

Transistor Code AP2906EY
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT26
Transistor SMD Code Z02SS
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 1V

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