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AP2530AGY MOSFET Transistor

The AP2530AGY is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2530AGY transistor as follows.

Circuit diagram symbol of the AP2530AGY transistor

AP2530AGY Transistor Specification

Transistor Code AP2530AGY
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SOT26
Transistor SMD Code YMSS
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.072Ohm
Power Dissipation (Maximum) PD 1.136W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6.5nS
Gate-Threshold Voltage (Maximum) 3V

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