AP10TN003P MOSFET Transistor

The AP10TN003P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10TN003P transistor as follows.

AP10TN003P Transistor Specification

Transistor Code		AP10TN003P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Transistor SMD Code		10TN003
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.003Ohm
Power Dissipation (Maximum)	PD	227W
Drain-Source Capacitance		1730pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		5V

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