FDP036N10A MOSFET Transistor

The FDP036N10A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP036N10A transistor as follows.

FDP036N10A Transistor Specification

Transistor Code		FDP036N10A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	125A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0036Ohm
Power Dissipation (Maximum)	PD	333W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		89nC

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