AOT11S60L MOSFET Transistor

The AOT11S60L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT11S60L transistor as follows.

AOT11S60L Transistor Specification

Transistor Code		AOT11S60L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.399Ohm
Power Dissipation (Maximum)	PD	178W
Drain-Source Capacitance		37.3pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2nS
Gate-Threshold Voltage (Maximum)		4.1V

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