SSF1109 MOSFET Transistor

The SSF1109 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF1109 transistor as follows.

SSF1109 Transistor Specification

Transistor Code		SSF1109
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	110V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	258W
Drain-Source Capacitance		454pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		108nS
Total Gate Charge		243nC

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