AOD2610E MOSFET Transistor

The AOD2610E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOD2610E transistor as follows.

AOD2610E Transistor Specification

Transistor Code		AOD2610E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	46A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0095Ohm
Power Dissipation (Maximum)	PD	59.5W
Drain-Source Capacitance		300pF
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		2.4V

UXPython is not the creator or an official representative of the AOD2610E MOSFET transistor. You can download the official AOD2610E MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

SUD45P03-09 MOSFET Transistor MTE50N15J3 MOSFET Transistor MTA06N03NJ3 MOSFET Transistor SSM40P03GH MOSFET Transistor SMN09L20D MOSFET Transistor SUD40N04-10A MOSFET Transistor AOD4T60P MOSFET Transistor MTB16P04J3 MOSFET Transistor AM30N10-50D MOSFET Transistor IPD075N03L MOSFET Transistor 3N65A MOSFET Transistor IPD65R950C6 MOSFET Transistor AOD3N80 MOSFET Transistor RU6581L MOSFET Transistor APQ01SN60AB MOSFET Transistor RU5H5L MOSFET Transistor RU1HE12L MOSFET Transistor AP9576GH MOSFET Transistor HY1N60D MOSFET Transistor AM30N02-59D MOSFET Transistor