HY1N60D MOSFET Transistor

The HY1N60D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY1N60D transistor as follows.

HY1N60D Transistor Specification

Transistor Code		HY1N60D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		1N60D
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		22pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.6nS
Gate-Threshold Voltage (Maximum)		4V

UXPython is not the creator or an official representative of the HY1N60D MOSFET transistor. You can download the official HY1N60D MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

MSD50N10 MOSFET Transistor IRFR420APBF MOSFET Transistor KXU05N25 MOSFET Transistor AM20N10-115D MOSFET Transistor MTN35N03J3 MOSFET Transistor CHM83A3PAGP MOSFET Transistor IRFRC20PBF MOSFET Transistor RU4090L MOSFET Transistor AOD2606 MOSFET Transistor QM4014D MOSFET Transistor SPN30T10 MOSFET Transistor MTN40N03J3 MOSFET Transistor FDD6776A MOSFET Transistor MMD60R360PRH MOSFET Transistor SUD50N10-34P MOSFET Transistor AM80N03-05D MOSFET Transistor KDD6030L MOSFET Transistor AOD4T60 MOSFET Transistor APQ03SN60AB MOSFET Transistor AOD8N25 MOSFET Transistor