AM7365P MOSFET Transistor

The AM7365P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AM7365P transistor as follows.

AM7365P Transistor Specification

Transistor Code		AM7365P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X3
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		232pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		30nC

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