AFN3814W MOSFET Transistor

The AFN3814W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN3814W transistor as follows.

AFN3814W Transistor Specification

Transistor Code		AFN3814W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3
Transistor SMD Code		3814W
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		285pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		13nC

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