CHM1710PAGP MOSFET Transistor

The CHM1710PAGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM1710PAGP transistor as follows.

CHM1710PAGP Transistor Specification

Transistor Code		CHM1710PAGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C
Rise Time		51nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		26nC

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